Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

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Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Issue Date
2015-08
Language
English
Citation

11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

DOI
10.1109/CLEOPR.2015.7375928
URI
http://hdl.handle.net/10203/315068
Appears in Collection
PH-Conference Papers(학술회의논문)
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