Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV

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dc.contributor.authorSeo, Daheeko
dc.contributor.authorBaek, Jongsuko
dc.contributor.authorCho, Byung-Jinko
dc.contributor.authorHwang, Wan Sikko
dc.date.accessioned2023-11-22T06:00:11Z-
dc.date.available2023-11-22T06:00:11Z-
dc.date.created2023-11-22-
dc.date.created2023-11-22-
dc.date.issued2024-01-
dc.identifier.citationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.169-
dc.identifier.issn1369-8001-
dc.identifier.urihttp://hdl.handle.net/10203/315029-
dc.description.abstractAn n-type amorphous Ga2O3 thin film with a bandgap of 4.9 eV is formed using the Sn-dopant spin-on-glass (SOG) method followed by a drive-in process at 400 °C for 1 h in an Ar atmosphere. The diffused Sn dopants effectively impact the current enhancement of the amorphous Ga2O3 thin film. The metal-oxide-semiconductor field-effect transistor (MOSFET) with the Sn-doped amorphous Ga2O3 channel layer exhibits typical n-type behavior and well-behaved transistor characteristics presenting two distinct operation regions: linear and saturation. By using a low-temperature deposition method, it becomes possible to create n-type amorphous Ga2O3 thin films with a bandgap of 4.9 eV that are highly compatible with various substrates. Furthermore, ultra-shallow junction formation is achieved in the amorphous Ga2O3 thin film, which is beneficial for high performance device applications.-
dc.languageEnglish-
dc.publisherELSEVIER SCI LTD-
dc.titleSn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV-
dc.typeArticle-
dc.identifier.wosid001104329100001-
dc.identifier.scopusid2-s2.0-85174587469-
dc.type.rimsART-
dc.citation.volume169-
dc.citation.publicationnameMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING-
dc.identifier.doi10.1016/j.mssp.2023.107922-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.nonIdAuthorSeo, Dahee-
dc.contributor.nonIdAuthorBaek, Jongsu-
dc.contributor.nonIdAuthorHwang, Wan Sik-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
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EE-Journal Papers(저널논문)
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