A 250-GHz Wideband Direct-Conversion CMOS Receiver Adopting Baseband Equalized Low-Loss Resistive Passive Mixer

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dc.contributor.authorJeon, Hyo-Ryeongko
dc.contributor.authorYun, ByeongHunko
dc.contributor.authorLee, Ho-Keunko
dc.contributor.authorLee, Sang-Gugko
dc.contributor.authorChoi, Kyungsikko
dc.date.accessioned2023-11-20T07:01:28Z-
dc.date.available2023-11-20T07:01:28Z-
dc.date.created2023-11-20-
dc.date.issued2023-10-
dc.identifier.citationIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.70, no.10, pp.3852 - 3856-
dc.identifier.issn1549-7747-
dc.identifier.urihttp://hdl.handle.net/10203/314851-
dc.description.abstractThis brief proposes a 250 GHz wideband mixer-first and direct-conversion RX adopting a baseband (BB) equalized single-balanced resistive mixer. The conventional resistive mixer suffers from the trade-off between gain and bandwidth, which hinders the wideband and low-loss mixer implementation. To address this challenge, the proposed RX employs the BB equalization technique that compensates for the narrowband response of the low-loss mixer by cascading it with the deliberately shaped response of the following BB amplifier, thereby achieving low-loss yet wideband characteristics of the overall receiver chain. Moreover, the conversion gain and the noise figure of the single-balanced mixer are further improved by adopting a lambda/4 open stub that suppresses the undesired LO leakage. Implemented in a 65 nm CMOS, the proposed RX achieves an effective 3-dB bandwidth of 26 GHz while dissipating a total dc power of 132 mW. Based on the calculated signal to noise-and-distortion ratio (SNDR), the proposed RX is expected to support a 16QAM demodulation with a data rate higher than 100 Gbps, in principle.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA 250-GHz Wideband Direct-Conversion CMOS Receiver Adopting Baseband Equalized Low-Loss Resistive Passive Mixer-
dc.typeArticle-
dc.identifier.wosid001079708000026-
dc.identifier.scopusid2-s2.0-85163424377-
dc.type.rimsART-
dc.citation.volume70-
dc.citation.issue10-
dc.citation.beginningpage3852-
dc.citation.endingpage3856-
dc.citation.publicationnameIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS-
dc.identifier.doi10.1109/TCSII.2023.3289215-
dc.contributor.localauthorLee, Sang-Gug-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthordirect-conversion-
dc.subject.keywordAuthormixer-
dc.subject.keywordAuthorreceiver-
dc.subject.keywordAuthorsub-terahertz-
dc.subject.keywordAuthorwideband-
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