DC Field | Value | Language |
---|---|---|
dc.contributor.author | Piersanti, S | ko |
dc.contributor.author | De Paulis, F | ko |
dc.contributor.author | Orlandi, A | ko |
dc.contributor.author | Kim, Dong-Hyun | ko |
dc.contributor.author | Cho, Jong-Hyun | ko |
dc.contributor.author | Kim, Joungho | ko |
dc.date.accessioned | 2023-11-08T12:00:42Z | - |
dc.date.available | 2023-11-08T12:00:42Z | - |
dc.date.created | 2023-11-08 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | IEEE International Symposium on Electromagnetic Compatibility, EMC 2015, pp.567 - 572 | - |
dc.identifier.issn | 2158-110X | - |
dc.identifier.uri | http://hdl.handle.net/10203/314455 | - |
dc.description.abstract | The paper deals with the time domain modeling of the hysteretic behavior of the coupling capacitance from a through silicon via (TSV). The model is developed in such a way that it can be implemented into standard circuit simulators. Results showing the effect of the hysteresis on the electrical performances of the signal channel containing the TSV are shown and discussed. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Through silicon via time domain crosstalk modeling considering hysteretic coupling capacitance | - |
dc.type | Conference | - |
dc.identifier.wosid | 000370282300101 | - |
dc.identifier.scopusid | 2-s2.0-84953870355 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 567 | - |
dc.citation.endingpage | 572 | - |
dc.citation.publicationname | IEEE International Symposium on Electromagnetic Compatibility, EMC 2015 | - |
dc.identifier.conferencecountry | GE | - |
dc.identifier.conferencelocation | Dresden | - |
dc.identifier.doi | 10.1109/ISEMC.2015.7256225 | - |
dc.contributor.localauthor | Kim, Joungho | - |
dc.contributor.nonIdAuthor | Piersanti, S | - |
dc.contributor.nonIdAuthor | De Paulis, F | - |
dc.contributor.nonIdAuthor | Orlandi, A | - |
dc.contributor.nonIdAuthor | Kim, Dong-Hyun | - |
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