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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Gate insulator for high mobility oxide TFT

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dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorKim, HOko
dc.contributor.authorCho, SHko
dc.contributor.authorRyu, MKko
dc.contributor.authorYang, JHko
dc.contributor.authorKo, Jong Beomko
dc.contributor.authorHwang, CSko
dc.date.accessioned2023-10-31T07:00:22Z-
dc.date.available2023-10-31T07:00:22Z-
dc.date.created2023-10-31-
dc.date.issued2014-10-
dc.identifier.citation12th Symposium on Thin Film Transistor Technologies, TFT 2014 - 2014 ECS and SMEQ Joint International Meeting, pp.123 - 128-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/10203/313954-
dc.description.abstractWe adopted SiO2 film by means of plasma enhanced atomic layer deposition (PEALD) as the first gate insulator of top gate IGZO TFT. TFT post-annealed at 300°C shows mobility, Vth, and S.S of 39.9 cm2/V.s, -1V, and 0.32 V/dec., respectively. We investigated the effect of H in the gate insulator during the annealing with the comparison of bottom gate coplanar TFT with ALD grown alumina film as the gate insulator.-
dc.languageEnglish-
dc.publisherElectrochemical Society Inc.-
dc.titleGate insulator for high mobility oxide TFT-
dc.typeConference-
dc.identifier.wosid000356775400018-
dc.identifier.scopusid2-s2.0-84921298123-
dc.type.rimsCONF-
dc.citation.beginningpage123-
dc.citation.endingpage128-
dc.citation.publicationname12th Symposium on Thin Film Transistor Technologies, TFT 2014 - 2014 ECS and SMEQ Joint International Meeting-
dc.identifier.conferencecountryMX-
dc.identifier.conferencelocationCancun-
dc.identifier.doi10.1149/06410.0123ecst-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorKim, HO-
dc.contributor.nonIdAuthorCho, SH-
dc.contributor.nonIdAuthorRyu, MK-
dc.contributor.nonIdAuthorYang, JH-
dc.contributor.nonIdAuthorHwang, CS-
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MS-Conference Papers(학술회의논문)
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