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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Effect of plasma power of plasma enhanced atomic layer deposition process for gate insulator deposition in top-gate thin-film transistors

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dc.contributor.authorKo, JBko
dc.contributor.authorYeom, HIko
dc.contributor.authorHwang, CSko
dc.contributor.authorCho, Sko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2023-10-18T07:00:42Z-
dc.date.available2023-10-18T07:00:42Z-
dc.date.created2023-10-18-
dc.date.issued2015-09-
dc.identifier.citationEuroDisplay 2015 Conference, pp.54-
dc.identifier.urihttp://hdl.handle.net/10203/313512-
dc.description.abstractIn this work, plasma enhanced atomic layer deposition process (PEALD) was used for the depositing SiO2 as the insulating layer with various plasma power. We investigated the effect of plasma power on the TFT performance in top-gate structure.-
dc.languageEnglish-
dc.publisherBlackwell Publishing Ltd-
dc.titleEffect of plasma power of plasma enhanced atomic layer deposition process for gate insulator deposition in top-gate thin-film transistors-
dc.typeConference-
dc.identifier.scopusid2-s2.0-85018382519-
dc.type.rimsCONF-
dc.citation.beginningpage54-
dc.citation.publicationnameEuroDisplay 2015 Conference-
dc.identifier.conferencecountryBE-
dc.identifier.conferencelocationGhent-
dc.identifier.doi10.1002/sdtp.10531-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorKo, JB-
dc.contributor.nonIdAuthorYeom, HI-
dc.contributor.nonIdAuthorHwang, CS-
dc.contributor.nonIdAuthorCho, S-
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MS-Conference Papers(학술회의논문)
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