DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, JB | ko |
dc.contributor.author | Yeom, HI | ko |
dc.contributor.author | Hwang, CS | ko |
dc.contributor.author | Cho, S | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.date.accessioned | 2023-10-18T07:00:42Z | - |
dc.date.available | 2023-10-18T07:00:42Z | - |
dc.date.created | 2023-10-18 | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | EuroDisplay 2015 Conference, pp.54 | - |
dc.identifier.uri | http://hdl.handle.net/10203/313512 | - |
dc.description.abstract | In this work, plasma enhanced atomic layer deposition process (PEALD) was used for the depositing SiO2 as the insulating layer with various plasma power. We investigated the effect of plasma power on the TFT performance in top-gate structure. | - |
dc.language | English | - |
dc.publisher | Blackwell Publishing Ltd | - |
dc.title | Effect of plasma power of plasma enhanced atomic layer deposition process for gate insulator deposition in top-gate thin-film transistors | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-85018382519 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 54 | - |
dc.citation.publicationname | EuroDisplay 2015 Conference | - |
dc.identifier.conferencecountry | BE | - |
dc.identifier.conferencelocation | Ghent | - |
dc.identifier.doi | 10.1002/sdtp.10531 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Ko, JB | - |
dc.contributor.nonIdAuthor | Yeom, HI | - |
dc.contributor.nonIdAuthor | Hwang, CS | - |
dc.contributor.nonIdAuthor | Cho, S | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.