Quantitative analysis of carrier escape efficiency in GaN-based light-emitting diodes
Internal quantum efficiency, non-radiative efficiency in the active region, and efficiency of carrier escape out of the active region in InGaN-based light-emitting diode are deduced by comparison between open- and short-circuit photoluminescence experiments.
- Issue Date
- 2015-08
- Language
- English
- Citation
11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- Appears in Collection
- PH-Conference Papers(학술회의논문)
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