DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Heejun | ko |
dc.contributor.author | Han, Hyunki | ko |
dc.contributor.author | Kim, Hyun-Sik | ko |
dc.date.accessioned | 2023-10-06T08:00:14Z | - |
dc.date.available | 2023-10-06T08:00:14Z | - |
dc.date.created | 2023-10-05 | - |
dc.date.created | 2023-10-05 | - |
dc.date.created | 2023-10-05 | - |
dc.date.issued | 2023-09 | - |
dc.identifier.citation | IEEE SOLID-STATE CIRCUITS LETTERS, v.6, pp.261 - 264 | - |
dc.identifier.issn | 2573-9603 | - |
dc.identifier.uri | http://hdl.handle.net/10203/313084 | - |
dc.description.abstract | This letter presents a 4-to-42-V input and 3.3-V output dc–dc buck converter for battery-powered automotive uses. Pulse-frequency modulation (PFM) is a common scheme employed to reduce quiescent current (IQ) and mitigate battery drain. However, sustaining the bootstrap voltage (VB) , essential for activating power switches, becomes arduous at elevated temperatures due to significant leakage currents, particularly when the switching frequency is low in no-load scenarios. To address this issue, this letter proposes a leakage-emulating oscillator-based (LEOB) refresher that stabilizes VB , even at temperatures as high as +125 °C. Additionally, an anti-deadlock self-bias supply is presented to further reduce IQ while ensuring fault tolerance. The chip, fabricated in a 180-nm BCD process, exhibits a low IQ of 3.2 μA and a peak efficiency of 95.5% (93.3%) at VIN= 24 V (42 V), with demonstrated stability of VB from −40 °C to +125 °C. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 4-to-42-V Input 3.3-V Output Self-Biased DC–DC Buck Converter Featuring Leakage-Emulated Bootstrap Voltage Refresher and Anti-Deadlock | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-85171547527 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.beginningpage | 261 | - |
dc.citation.endingpage | 264 | - |
dc.citation.publicationname | IEEE SOLID-STATE CIRCUITS LETTERS | - |
dc.identifier.doi | 10.1109/lssc.2023.3314795 | - |
dc.contributor.localauthor | Kim, Hyun-Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Schottky diodes | - |
dc.subject.keywordAuthor | Leakage currents | - |
dc.subject.keywordAuthor | Oscillators | - |
dc.subject.keywordAuthor | Solid state circuits | - |
dc.subject.keywordAuthor | Voltage control | - |
dc.subject.keywordAuthor | Voltage | - |
dc.subject.keywordAuthor | Temperature sensors | - |
dc.subject.keywordAuthor | Anti-deadlock | - |
dc.subject.keywordAuthor | automotive-grade | - |
dc.subject.keywordAuthor | bootstrapping | - |
dc.subject.keywordAuthor | dc-dc buck converter | - |
dc.subject.keywordAuthor | diode leakage | - |
dc.subject.keywordAuthor | high voltage (HV) | - |
dc.subject.keywordAuthor | leakage-emulating oscillator (LEO) | - |
dc.subject.keywordAuthor | low-quiescent power | - |
dc.subject.keywordAuthor | self-bias supply | - |
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