Wideband equivalent circuit model for a through silicon via with effective substrate current loop

Abstract

An equivalent circuit model of through silicon via considering the eddy current flow inside the silicon is proposed to predict the electrical performance up to 100GHz. The parasitic elements of the proposed circuit model are derived by the structural dimensions and material properties of the TSV, and its electrical performance of the proposed equivalent circuit model is analyzed with structure size variations. The analyzed results show the proposed model accurately expresses the physical meaning.