DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Hyoungcheol | ko |
dc.contributor.author | Huh, Hyunsuk | ko |
dc.contributor.author | Seo, Hwiwon | ko |
dc.contributor.author | Han, Songhee | ko |
dc.contributor.author | Won, Imhee | ko |
dc.contributor.author | Sue, Jiwoong | ko |
dc.contributor.author | Oh, Dongyean | ko |
dc.contributor.author | Iza, Felipe | ko |
dc.contributor.author | Lee, Seungchul | ko |
dc.contributor.author | Park, Sung Kye | ko |
dc.contributor.author | Cha, Seonyong | ko |
dc.date.accessioned | 2023-09-13T03:00:40Z | - |
dc.date.available | 2023-09-13T03:00:40Z | - |
dc.date.created | 2023-09-13 | - |
dc.date.created | 2023-09-13 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.citation | PHYSICS OF PLASMAS, v.29, no.7 | - |
dc.identifier.issn | 1070-664X | - |
dc.identifier.uri | http://hdl.handle.net/10203/312543 | - |
dc.description.abstract | Cost-effective vertical etching of plug holes and word lines is crucial in enhancing 3D NAND device manufacturability. Even though multiscale technology computer-aided design (TCAD) methodology is suitable for effectively predicting etching processes and optimizing recipes, it is highly time-consuming. This article demonstrates that our deep learning platform called TCAD-augmented Generative Adversarial Network can reduce the computational load by 2 600 000 times. In addition, because well-calibrated TCAD data based on physical and chemical mutual reactions are used to train the platform, the etching profile can be predicted with the same accuracy as TCAD-only even when the actual experimental data are scarce. This platform opens up new applications, such as hot spot detection and mask layout optimization, in a chip-level area of 3D NAND fabrication. Published under an exclusive license by AIP Publishing. | - |
dc.language | English | - |
dc.publisher | AIP Publishing | - |
dc.title | TCAD augmented generative adversarial network for hot-spot detection and mask-layout optimization in a large area HARC etching process | - |
dc.type | Article | - |
dc.identifier.wosid | 000827554900005 | - |
dc.identifier.scopusid | 2-s2.0-85133963169 | - |
dc.type.rims | ART | - |
dc.citation.volume | 29 | - |
dc.citation.issue | 7 | - |
dc.citation.publicationname | PHYSICS OF PLASMAS | - |
dc.identifier.doi | 10.1063/5.0093076 | - |
dc.contributor.localauthor | Lee, Seungchul | - |
dc.contributor.nonIdAuthor | Kwon, Hyoungcheol | - |
dc.contributor.nonIdAuthor | Huh, Hyunsuk | - |
dc.contributor.nonIdAuthor | Seo, Hwiwon | - |
dc.contributor.nonIdAuthor | Han, Songhee | - |
dc.contributor.nonIdAuthor | Won, Imhee | - |
dc.contributor.nonIdAuthor | Sue, Jiwoong | - |
dc.contributor.nonIdAuthor | Oh, Dongyean | - |
dc.contributor.nonIdAuthor | Iza, Felipe | - |
dc.contributor.nonIdAuthor | Park, Sung Kye | - |
dc.contributor.nonIdAuthor | Cha, Seonyong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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