DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Yeongjun | ko |
dc.contributor.author | Seo, Junbeom | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2023-09-01T06:01:08Z | - |
dc.date.available | 2023-09-01T06:01:08Z | - |
dc.date.created | 2023-05-30 | - |
dc.date.issued | 2023-06 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.6, pp.2956 - 2961 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/312112 | - |
dc.description.abstract | Silicon channel tunnel field-effect transistors (TFETs) are known to exhibit low ON-state current due to the wide indirect band gap. In this work, to achieve high ON-state current, we propose a Si TFET with an ultra-thin dipole formation layer (DFL) inserted at the source/channel junction. The inserted DFL forms charge transfer dipoles at the interface, resulting in a staggered band gap. As the consequence, the effective tunnel barrier for electrons is significantly lowered so that ON-state current increases by orders of magnitude. To analyze the characteristics of DFL-inserted Si TFETs, we have solved nonequilibrium Green's function (NEGF) and Poisson's equation using density functional theory (DFT) Hamiltonians. We demonstrate that DFL-inserted Si TFETs show boosted performance over conventional TFETs, exhibiting high ON-state current and steep subthreshold swing (SS). | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Performance Boost of Si TFETs by Insertion of III-V Dipole Formation Layer: A First Principle Study | - |
dc.type | Article | - |
dc.identifier.wosid | 000988527700001 | - |
dc.identifier.scopusid | 2-s2.0-85159798592 | - |
dc.type.rims | ART | - |
dc.citation.volume | 70 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 2956 | - |
dc.citation.endingpage | 2961 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2023.3270259 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | TFETs | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Gallium arsenide | - |
dc.subject.keywordAuthor | Photonic band gap | - |
dc.subject.keywordAuthor | Discrete Fourier transforms | - |
dc.subject.keywordAuthor | Electric potential | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Band engineering | - |
dc.subject.keywordAuthor | density functional theory (DFT) | - |
dc.subject.keywordAuthor | quantum transport | - |
dc.subject.keywordAuthor | tunnel field-effect transistors (TFETs) | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TUNNEL FET | - |
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