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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Application of Rapid Thermal Annealing Process to the Display Technology

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dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorJi, Sanghyunko
dc.contributor.authorJeong, Pilseongko
dc.contributor.authorNam, Yunyongko
dc.contributor.authorYang, Jong-Heonko
dc.contributor.authorHwang, Chi-Sunko
dc.date.accessioned2023-08-29T10:00:40Z-
dc.date.available2023-08-29T10:00:40Z-
dc.date.created2023-07-06-
dc.date.issued2018-05-
dc.identifier.citationSID Symposium, Seminar, and Exhibition 2018, Display Week 2018, pp.748 - 750-
dc.identifier.issn0097-966X-
dc.identifier.urihttp://hdl.handle.net/10203/311952-
dc.description.abstractWe report the effect of a rapid thermal annealing process (RTP) on the ion dopant activation process in LTPS TFT on PI substrate and on the electrical properties of Al-doped InZnSnO thin film transistor (TFT) with back-channel etched BCE structure.-
dc.languageEnglish-
dc.publisherJohn Wiley and Sons Inc-
dc.titleApplication of Rapid Thermal Annealing Process to the Display Technology-
dc.typeConference-
dc.identifier.scopusid2-s2.0-85138711628-
dc.type.rimsCONF-
dc.citation.beginningpage748-
dc.citation.endingpage750-
dc.citation.publicationnameSID Symposium, Seminar, and Exhibition 2018, Display Week 2018-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationLos Angeles, CA-
dc.identifier.doi10.1002/SDTP.12341-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorJi, Sanghyun-
dc.contributor.nonIdAuthorJeong, Pilseong-
dc.contributor.nonIdAuthorNam, Yunyong-
dc.contributor.nonIdAuthorYang, Jong-Heon-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
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MS-Conference Papers(학술회의논문)
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