Improved field effect mobility and stability of indium-free oxide thin film transistor by metal capping layer
In this work, to get better electrical properties, metal capping layer and lift-off lithography process of a new type of Indium-free amorphous thin films and associated thin-film transistors (TFTs) were investigated. As a result, optimized TFTs showed high mobility (>30cm2/Vs) and excellent stability than conventional InZnO TFTs.
- Publisher
- International Display Workshops
- Issue Date
- 2019-11
- Language
- English
- Citation
26th International Display Workshops, IDW 2019, pp.563 - 566
- ISSN
- 1883-2490
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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