DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Soungmin | ko |
dc.contributor.author | Jeong, Tae Young | ko |
dc.contributor.author | Raebiger, Hannes | ko |
dc.contributor.author | Yee, Ki-Ju | ko |
dc.contributor.author | Kim, Yong-Hoon | ko |
dc.date.accessioned | 2023-08-24T03:00:35Z | - |
dc.date.available | 2023-08-24T03:00:35Z | - |
dc.date.created | 2023-08-07 | - |
dc.date.created | 2023-08-07 | - |
dc.date.created | 2023-08-07 | - |
dc.date.issued | 2023-08 | - |
dc.identifier.citation | NANOSCALE HORIZONS, v.8, no.9, pp.1282 - 1287 | - |
dc.identifier.issn | 2055-6756 | - |
dc.identifier.uri | http://hdl.handle.net/10203/311773 | - |
dc.description.abstract | We report spectroscopic evidence for the ultrafast trapping of band edge excitons at defects and the subsequent generation of defect-localized coherent phonons (CPs) in monolayer MoSe2. While the photoluminescence measurement provides signals of exciton recombination at both shallow and deep traps, our time-resolved pump-probe spectroscopy on the sub-picosecond time scale detects localized CPs only from the ultrafast exciton trapping at shallow traps. Based on occupation-constrained density functional calculations, we identify the Se vacancy and the oxygen molecule adsorbed on a Se vacancy as the atomistic origins of deep and shallow traps, respectively. Establishing the correlations between the defect-induced ultrafast exciton trapping and the generation of defect-localized CPs, our work could open up new avenues to engineer photoexcited carriers through lattice defects in two-dimensional materials. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Localized coherent phonon generation in monolayer MoSe2 from ultrafast exciton trapping at shallow traps | - |
dc.type | Article | - |
dc.identifier.wosid | 001032118900001 | - |
dc.identifier.scopusid | 2-s2.0-85166205665 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1282 | - |
dc.citation.endingpage | 1287 | - |
dc.citation.publicationname | NANOSCALE HORIZONS | - |
dc.identifier.doi | 10.1039/d3nh00194f | - |
dc.contributor.localauthor | Kim, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Bae, Soungmin | - |
dc.contributor.nonIdAuthor | Jeong, Tae Young | - |
dc.contributor.nonIdAuthor | Raebiger, Hannes | - |
dc.contributor.nonIdAuthor | Yee, Ki-Ju | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | MODULATION | - |
dc.subject.keywordPlus | DEFECTS | - |
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