DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Chanhyeong | ko |
dc.contributor.author | Kim, Kabjin | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2023-08-14T03:00:41Z | - |
dc.date.available | 2023-08-14T03:00:41Z | - |
dc.date.created | 2023-08-14 | - |
dc.date.created | 2023-08-14 | - |
dc.date.created | 2023-08-14 | - |
dc.date.issued | 2023-08 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON MAGNETICS, v.59, no.8 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | http://hdl.handle.net/10203/311462 | - |
dc.description.abstract | The Bloch line (BL) racetrack memory (RTM) has recently been proposed as a novel device to overcome the problems of the conventional domain wall (DW) RTM such as stochastic shift and high shift threshold current due to process-induced roughness. In this work, we assess the performance of BL RTM memory cells by conducting circuit-level simulations. A micromagnetics-SPICE hybrid simulation framework is proposed and implemented as an optimal solution to guarantee both computational efficiency and micromagnetics-level accuracy. The feasibility of multibit BL memory operations is demonstrated as the stochastic Landau-Lifshitz-Gilbert (s-LLG) and Monte-Carlo (MC) simulations are carried out at room temperature to take into account the temperature effect and process-induced device mismatch. Furthermore, some crucial considerations in designing and optimizing the BL memory are addressed. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Circuit-Level Memory Cell Simulation of Magnetic Bloch Line Racetrack Memory | - |
dc.type | Article | - |
dc.identifier.wosid | 001037843600001 | - |
dc.identifier.scopusid | 2-s2.0-85162905143 | - |
dc.type.rims | ART | - |
dc.citation.volume | 59 | - |
dc.citation.issue | 8 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.identifier.doi | 10.1109/TMAG.2023.3288400 | - |
dc.contributor.localauthor | Kim, Kabjin | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Lee, Chanhyeong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Bloch line (BL) device | - |
dc.subject.keywordAuthor | micromagnetics simulation | - |
dc.subject.keywordAuthor | racetrack memory (RTM) | - |
dc.subject.keywordAuthor | SPICE simulation | - |
dc.subject.keywordPlus | TEMPERATURE-DEPENDENCE | - |
dc.subject.keywordPlus | TUNNEL | - |
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