Triboelectrification driven fin-fact (flip-flop actuated channel transistor) for security application

Abstract

A silicon-nanowire (Si-NW) switch with triboelectricity is proposed for the first time for future electronics with enhanced security application. The dimensions of the mechanical NW switch are width 50 nm and thickness 100 nm with a 50-nm-thick airgap, fabricated with aid of CMOS fabrication technology. By hand-touch on gate pad, the fabricated switch can turn-on as well as turn-off by destruction of fin-channel which comes from electrostatic force by triboelectricity. This technology is expected as a security-enhanced future electronics.