DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yi, Boram | ko |
dc.contributor.author | Hwang, Junghyeon | ko |
dc.contributor.author | Oh, Tae Woo | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.contributor.author | Jung, Seong-Ook | ko |
dc.contributor.author | Yang, Ji-Woon | ko |
dc.date.accessioned | 2023-07-27T06:00:13Z | - |
dc.date.available | 2023-07-27T06:00:13Z | - |
dc.date.created | 2023-07-27 | - |
dc.date.issued | 2023-08 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.206 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/310866 | - |
dc.description.abstract | The performance of ferroelectric field-effect transistor (FeFET)-based ternary content addressable memory (TCAM) is examined to optimize the metal-ferroelectric-metal (MFM) capacitor of FeFET through a compact model based on the multi-domain Preisach theory. To reduce the search delay of the FeFET-based TCAM, the area of the MFM capacitor should be reduced, therefore enhancing polarization. Further, the effect of the polarization properties of ferroelectric material on the performance of the FeFET-based TCAM is explored. The increase in the polarization of ferroelectric material leads to better performance; however, the coercive voltage should also be optimized. As a result, to improve the performance of a circuit using FeFETs, simulations using reliable compact models are required. The results of this study can provide directions for developing ferroelectric materials. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory | - |
dc.type | Article | - |
dc.identifier.wosid | 001022232700001 | - |
dc.identifier.scopusid | 2-s2.0-85163365057 | - |
dc.type.rims | ART | - |
dc.citation.volume | 206 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.identifier.doi | 10.1016/j.sse.2023.108674 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Yi, Boram | - |
dc.contributor.nonIdAuthor | Hwang, Junghyeon | - |
dc.contributor.nonIdAuthor | Oh, Tae Woo | - |
dc.contributor.nonIdAuthor | Jung, Seong-Ook | - |
dc.contributor.nonIdAuthor | Yang, Ji-Woon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Compact model | - |
dc.subject.keywordAuthor | Ferroelectric FET | - |
dc.subject.keywordAuthor | Logic-in-memory | - |
dc.subject.keywordAuthor | Non-volatile logic | - |
dc.subject.keywordAuthor | Non-volatile memory | - |
dc.subject.keywordAuthor | TCAM | - |
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