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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Flexible oxide thin-film transistor with high process temperature by means of peel-off and transfer method

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dc.contributor.authorKo, Jong Beomko
dc.contributor.authorLee, Seung-Heeko
dc.contributor.authorLee, Tae-Ikko
dc.contributor.authorKim, Taek-Sooko
dc.contributor.authorKim, Hyeokko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2023-07-25T11:00:31Z-
dc.date.available2023-07-25T11:00:31Z-
dc.date.created2023-07-07-
dc.date.issued2018-12-
dc.identifier.citation25th International Display Workshops, IDW 2018, pp.1536 - 1538-
dc.identifier.issn1883-2490-
dc.identifier.urihttp://hdl.handle.net/10203/310803-
dc.description.abstractFor the flexible transparent display driving device, we realize the flexible oxide TFT with high process temperature up to 300°C by using inorganic exfoliation layer. The low adhesive energy between oxide TFT and exfoliation layer was measured, and the device shows reasonable electrical characteristics.-
dc.languageEnglish-
dc.publisherInternational Display Workshops-
dc.titleFlexible oxide thin-film transistor with high process temperature by means of peel-off and transfer method-
dc.typeConference-
dc.identifier.scopusid2-s2.0-85072128465-
dc.type.rimsCONF-
dc.citation.beginningpage1536-
dc.citation.endingpage1538-
dc.citation.publicationname25th International Display Workshops, IDW 2018-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationNagoya-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorLee, Seung-Hee-
dc.contributor.nonIdAuthorLee, Tae-Ik-
dc.contributor.nonIdAuthorKim, Taek-Soo-
dc.contributor.nonIdAuthorKim, Hyeok-
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MS-Conference Papers(학술회의논문)
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