DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Sehee | ko |
dc.contributor.author | Goh, Youngin | ko |
dc.contributor.author | Lee, Young Kyu | ko |
dc.contributor.author | Ko, Dong Han | ko |
dc.contributor.author | Hwang, Junghyeon | ko |
dc.contributor.author | Jeong, Yeongseok | ko |
dc.contributor.author | Shin, Hunbeom | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.contributor.author | Jung, Seong-Ook | ko |
dc.date.accessioned | 2023-07-19T02:00:31Z | - |
dc.date.available | 2023-07-19T02:00:31Z | - |
dc.date.created | 2023-05-30 | - |
dc.date.issued | 2023-07 | - |
dc.identifier.citation | IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.7, pp.1860 - 1870 | - |
dc.identifier.issn | 0018-9200 | - |
dc.identifier.uri | http://hdl.handle.net/10203/310593 | - |
dc.description.abstract | This study proposes a self-rectifying ferroelectric tunnel junction (SR-FTJ) crosspoint array to satisfy the stringent size requirements of the Internet-of-Things devices. Each cell in the SR-FTJ crosspoint array consists of two SR-FTJs stacked vertically, resulting in ultrahigh density. The SR-FTJ crosspoint array can operate as: 1) ternary content-addressable memory (TCAM) or 2) binary content addressable memory (BCAM) or physically unclonable function (PUF) in the dual-mode operation. In the dual-mode operation, the amount of the current flowing through the SR-FTJs remains the same, resulting in a stable PUF response regardless of the BCAM data. The dual-mode operation of the SR-FTJ crosspoint array is experimentally verified by 4-in wafer-level demonstrations. HSPICE simulation results using the industrial-compatible 180-nm technology with the SR-FTJ model reflecting measured characteristics show that the SR-FTJ crosspoint array achieves the lowest search energy (2.05 fJ/search/bit) and the highest randomness (Hamming weight of 0.5000) among the previous content addressable memories (CAMs) and PUFs. In addition, the SR-FTJ crosspoint array reduces area by > 84.2% compared to the previous structures that implement individual CAM and PUF. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000976065600001 | - |
dc.identifier.scopusid | 2-s2.0-85153514651 | - |
dc.type.rims | ART | - |
dc.citation.volume | 58 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 1860 | - |
dc.citation.endingpage | 1870 | - |
dc.citation.publicationname | IEEE JOURNAL OF SOLID-STATE CIRCUITS | - |
dc.identifier.doi | 10.1109/JSSC.2023.3265667 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Lim, Sehee | - |
dc.contributor.nonIdAuthor | Goh, Youngin | - |
dc.contributor.nonIdAuthor | Lee, Young Kyu | - |
dc.contributor.nonIdAuthor | Ko, Dong Han | - |
dc.contributor.nonIdAuthor | Hwang, Junghyeon | - |
dc.contributor.nonIdAuthor | Jeong, Yeongseok | - |
dc.contributor.nonIdAuthor | Jung, Seong-Ook | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Area efficiency | - |
dc.subject.keywordAuthor | content addressable memory (CAM) | - |
dc.subject.keywordAuthor | crosspoint array | - |
dc.subject.keywordAuthor | dual-mode operation | - |
dc.subject.keywordAuthor | Internet of Things (IoT) | - |
dc.subject.keywordAuthor | leakage current | - |
dc.subject.keywordAuthor | physically unclonable function (PUF) | - |
dc.subject.keywordAuthor | self-rectifying ferroelectric tunnel junction (SR-FTJ) | - |
dc.subject.keywordPlus | CONTENT-ADDRESSABLE MEMORY | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | CELL | - |
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