Multi-physics simulation framework for crystallization of phase-change memory: an application to ultrathin Sb-based monatomic phase-change devices

Abstract

The phase-change memory(PCM) has been noticed as the emerging storage-class memory bridging the gap between DRAM and Flash memory with excellent technical maturity. Also, PCM has been regarded as the multi-bit memory and synaptic device for neuromorphic computing due to its continuous resistance level. However, The resistance drift, which is the temporal rise of device resistance, has been a significant obstacle to device application. To address that issue, the nanoconfined ultrathin single-element PCM was proposed. In this work, the multi-physics framework for crystallization simulation of PCM has been developed and applied to an antimony-based monatomic device. Previous device simulations have simulated typical phase-change material and the drift current was only considered. Therefore, this work has used emerging phase-change material antimony and considered diffusion current by thermoelectric effect. The pulse simulations were performed to verify the feasibility of PCM as multi-bit memory and neuromorphic device.