DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Park, Sang-Hee Ko | - |
dc.contributor.advisor | 박상희 | - |
dc.contributor.author | Woo, Namgyu | - |
dc.date.accessioned | 2023-06-23T19:32:09Z | - |
dc.date.available | 2023-06-23T19:32:09Z | - |
dc.date.issued | 2023 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1032809&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/308959 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 신소재공학과, 2023.2,[iv, 48 p. :] | - |
dc.description.abstract | This study aims to fabricate indium-aluminum-zinc oxide that compensates for the disadvantages of an indium-gallium-zinc oxide semiconductor, which is mainly used as a semiconductor for thin film transistors. Typical problems of indium-gallium zinc oxide include its narrow bandgap and instability under a constant gate voltage and thermal conditions. Aluminum oxide is superior to gallium in terms of adjusting the bandgap of an oxide semiconductor, and can suppress the formation of bandgap defects caused by oxygen vacancies owing to its strong binding energy with oxygen. Considering the cost, it is more advantageous to use aluminum compared to gallium, which is a rare earth metal. In this study, three methods for doping aluminum on indium-zinc oxide using plasma-enhanced atomic layer deposition were presented. The cause of difference in the performance of the thin film transistors according to each method was explained by the chemical composition of the oxide semiconductor and the passivation effect by hydrogen. Indium-aluminum-zinc oxide semiconductor thin film transistors with different aluminum contents were fabricated by adopting the deposition method with the best performance among the three recipes, and the electrical performance was analyzed. The difference in the transistor performance was explained based on the tendency of the oxygen vacancies according to the aluminum content. As a result, an indium-aluminum-zinc oxide semiconductor thin film transistor with a high mobility and stability was fabricated. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | indium-aluminum-zinc oxide semiconductor▼ahigh mobility▼ahigh stability▼aoxygen vacancy▼acorrelation between aluminum content and oxide semiconductor | - |
dc.subject | 인듐-알루미늄-아연 산화물 반도체▼a고이동도▼a고안정성▼a산소 결손▼a알루미늄 함량과 산화물 반도체 사이의 상관 관계 | - |
dc.title | (A) study on the characteristics of indium-aluminum-zinc oxide thin-film transistors according to aluminum content using plasma-enhanced atomic layer deposition | - |
dc.title.alternative | 플라즈마 원자층 증착법을 이용한 알루미늄 함량에 따른 인듐-알루미늄-아연 산화물 박막 트랜지스터의 특성 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
dc.contributor.alternativeauthor | 우남규 | - |
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