DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Park, Sang-Hee | - |
dc.contributor.advisor | 박상희 | - |
dc.contributor.author | Kim, Jun Sung | - |
dc.date.accessioned | 2023-06-23T19:32:08Z | - |
dc.date.available | 2023-06-23T19:32:08Z | - |
dc.date.issued | 2022 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=997698&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/308956 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 신소재공학과, 2022.2,[vi, 43 p. :] | - |
dc.description.abstract | Channel-shortening-effect (CSE) in oxide thin film transistors (TFTs) is a crucial issue that must be resolved for applications in ultra-high-resolution displays. One of the origins of the CSE is the diffusion of a shallow donor such as hydrogen (H) from other layers into the channel. In this study, we investigated for the first time the CSE of self-aligned Al-doped In-Sn-Zn-O (Al-ITZO) TFTs with planar and trench structures. The TFTs with planar structures exhibited severe negative V$_{on}$ shifts after an annealing process, whereas the TFTs with trench structures were barely affected, thereby exhibiting excellent on/off characteristics. The vertical channel in the trench TFT had higher resistance than the horizontal channel because of a back-sidewall roughness and thin channel. The high resistance of vertical channels played a significant role in determining the on/off characteristics of Al-ITZO TFT, where V$_{on}$ remained constant until the diffused shallow donors made the resistive vertical channels become conductive. Based on these unique operation characteristics, the suppression of CSE in a trench TFT was demonstrated even under a high annealing temperature, resulting in a high mobility and high stability. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.title | (A) study on suppression of channel-shortening effect of high-mobility thin film transistor using trench structure | - |
dc.title.alternative | 트렌치 구조의 적용을 통한 고이동도 산화물 박막 트랜지스터의 채널 쇼트닝 효과 억제에 대한 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
dc.contributor.alternativeauthor | 김준성 | - |
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