Study on the electrical properties of $ZrO_x$-based charge trap memristor for neuromorphic application

Abstract

In this study, we developed $ZrO_x$-based charge trap memristors for neuromorphic applications, and analyzed the electrical properties according to thin film properties and structures. In the $ZrO_x$-based single layer charge trap memristor, the current-voltage curves changed according to the power, temperature, and oxygen ratio during $ZrO_x$ deposition conditions. In particular, as the oxygen ratio of $ZrO_x$ decreased, the ratio of oxygen vacancies acting as trap sites increased, and the switching speed of the device is increased. Also, in the $AlO_x$ and $ZrO_x$ double layer charge trap memristors, the current-voltage curves were different depending on the location of $AlO_x$, and this was explained through the energy band diagram. In addition, the triple layer charge trap memristor of the $Pt$/$AlO_x$/$ZrO_x$/$AlO_x$/$Ti$ structure has non-volatile property and analog conductance change property required as a synaptic mimic device, and the switching speed increases as the oxygen ratio of decreases during the deposition of $ZrO_x$.