DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Lee, Keon Jae | - |
dc.contributor.advisor | 이건재 | - |
dc.contributor.author | Sung, Sang Hyun | - |
dc.date.accessioned | 2023-06-22T19:34:08Z | - |
dc.date.available | 2023-06-22T19:34:08Z | - |
dc.date.issued | 2022 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=1007833&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/308621 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 신소재공학과, 2022.8,[v, 82 p. :] | - |
dc.description.abstract | Next generation nonvolatile memories (NVMs) such as a ferroelectric random access memory (FRAM), a phase-change random access memory (PRAM), a resistive random access memory (RRAM), and a magnetic random access memory (MRAM) have attracted considerable attention because of their unique advantages when compared to the a dynamic random access memory (DRAM) and a flash memory. Although they are promising candidates for the NVM, there are unsolved problems for the practical applications. In this thesis, ferroelectric tunnel junction (FTJ) is demonstrated for the next-generation NVM with improved performances. The high performance FTJ is realized using semiconductive oxide electrode, which enhances the on/off ratio and develops diode-like property. In addition, a novel neurosynaptic device is proposed for the neuromorphic computing system, which unifies volatile threshold switch and nonvolatile phase change memory in a single device. This threshold switch-phase change memory (TS-PCM) device demonstrates neuronal intrinsic plasticity and synaptic plasiticty in a concomitant manner, emulating biological neuron and synapse simultaneously. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | next-generation memory▼aferroelectric tunnel junction▼aneuromorphic memory | - |
dc.subject | 차세대 메모리▼a강유전 터널 접합▼a뉴로모픽 메모리 | - |
dc.title | Fabrication and characterization of next-generation inorganic nonvolatile memories | - |
dc.title.alternative | 차세대 무기소재 기반 비휘발성 메모리 제작 및 특성 평가 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
dc.contributor.alternativeauthor | 성상현 | - |
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