DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Seung Jin | ko |
dc.contributor.author | Lee, Sangmin | ko |
dc.contributor.author | Choi, Kyung Cheol | ko |
dc.contributor.author | Kwon, Jeong Hyun | ko |
dc.contributor.author | Kim, Taek-Soo | ko |
dc.date.accessioned | 2023-06-18T06:00:23Z | - |
dc.date.available | 2023-06-18T06:00:23Z | - |
dc.date.created | 2023-05-30 | - |
dc.date.created | 2023-05-30 | - |
dc.date.issued | 2023-06 | - |
dc.identifier.citation | JOURNAL OF MATERIALS CHEMISTRY C, v.11, no.22, pp.7262 - 7271 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | http://hdl.handle.net/10203/307317 | - |
dc.description.abstract | The lack of characterization of the mechanical behavior of brittle indium tin oxide (ITO)-based electrodes has been a core issue for the development of advanced transparent and flexible electronics. In this study, we report the intrinsic mechanical properties of ITO/Ag/ITO (IAI) thin films measured by a free-standing tensile testing method for robust transparent electrodes. To understand the effect of Ag interlayer formation on the mechanical properties, Ag thickness is controlled (8-50 nm) by considering the stage of the film formation. Based on the tensile test, IAI thin films with a film-likely formed Ag interlayer (12-14 nm) exhibited outstanding mechanical robustness compared with island-(8 nm) or film-type (>25 nm) Ag interlayers. Notably, the most superior elongation and tensile strength (0.57 +/- 0.08% and 514.3 +/- 71.5 MPa) are demonstrated for 14 nm-thick Ag interlayer, which is two-fold higher than pristine ITO thin films (0.27% and 264.6 MPa). The study provides intrinsic mechanical property values and fundamental insights into the fracture mechanisms that govern the mechanical behavior of oxide/metal/oxide multilayer thin films, which is valuable for the development of flexible electronics. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Elucidating the effect of Ag interlayer formation on the intrinsic mechanical properties of free-standing ITO/Ag/ITO thin films | - |
dc.type | Article | - |
dc.identifier.wosid | 000980510300001 | - |
dc.identifier.scopusid | 2-s2.0-85157970632 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 22 | - |
dc.citation.beginningpage | 7262 | - |
dc.citation.endingpage | 7271 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.identifier.doi | 10.1039/d3tc01002c | - |
dc.contributor.localauthor | Choi, Kyung Cheol | - |
dc.contributor.localauthor | Kim, Taek-Soo | - |
dc.contributor.nonIdAuthor | Kwon, Jeong Hyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | ITO | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | ELECTRODE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | ANODES | - |
dc.subject.keywordPlus | ARRAY | - |
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