Elucidating the effect of Ag interlayer formation on the intrinsic mechanical properties of free-standing ITO/Ag/ITO thin films

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dc.contributor.authorOh, Seung Jinko
dc.contributor.authorLee, Sangminko
dc.contributor.authorChoi, Kyung Cheolko
dc.contributor.authorKwon, Jeong Hyunko
dc.contributor.authorKim, Taek-Sooko
dc.date.accessioned2023-06-18T06:00:23Z-
dc.date.available2023-06-18T06:00:23Z-
dc.date.created2023-05-30-
dc.date.created2023-05-30-
dc.date.issued2023-06-
dc.identifier.citationJOURNAL OF MATERIALS CHEMISTRY C, v.11, no.22, pp.7262 - 7271-
dc.identifier.issn2050-7526-
dc.identifier.urihttp://hdl.handle.net/10203/307317-
dc.description.abstractThe lack of characterization of the mechanical behavior of brittle indium tin oxide (ITO)-based electrodes has been a core issue for the development of advanced transparent and flexible electronics. In this study, we report the intrinsic mechanical properties of ITO/Ag/ITO (IAI) thin films measured by a free-standing tensile testing method for robust transparent electrodes. To understand the effect of Ag interlayer formation on the mechanical properties, Ag thickness is controlled (8-50 nm) by considering the stage of the film formation. Based on the tensile test, IAI thin films with a film-likely formed Ag interlayer (12-14 nm) exhibited outstanding mechanical robustness compared with island-(8 nm) or film-type (>25 nm) Ag interlayers. Notably, the most superior elongation and tensile strength (0.57 +/- 0.08% and 514.3 +/- 71.5 MPa) are demonstrated for 14 nm-thick Ag interlayer, which is two-fold higher than pristine ITO thin films (0.27% and 264.6 MPa). The study provides intrinsic mechanical property values and fundamental insights into the fracture mechanisms that govern the mechanical behavior of oxide/metal/oxide multilayer thin films, which is valuable for the development of flexible electronics.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.titleElucidating the effect of Ag interlayer formation on the intrinsic mechanical properties of free-standing ITO/Ag/ITO thin films-
dc.typeArticle-
dc.identifier.wosid000980510300001-
dc.identifier.scopusid2-s2.0-85157970632-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue22-
dc.citation.beginningpage7262-
dc.citation.endingpage7271-
dc.citation.publicationnameJOURNAL OF MATERIALS CHEMISTRY C-
dc.identifier.doi10.1039/d3tc01002c-
dc.contributor.localauthorChoi, Kyung Cheol-
dc.contributor.localauthorKim, Taek-Soo-
dc.contributor.nonIdAuthorKwon, Jeong Hyun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusITO-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusELECTRODE-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusANODES-
dc.subject.keywordPlusARRAY-
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