DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Xuejing | ko |
dc.contributor.author | Lee, Seungkyeong | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.contributor.author | Yang, Kyoung-Hoon | ko |
dc.date.accessioned | 2023-06-11T04:00:14Z | - |
dc.date.available | 2023-06-11T04:00:14Z | - |
dc.date.created | 2023-06-09 | - |
dc.date.created | 2023-06-09 | - |
dc.date.created | 2023-06-09 | - |
dc.date.created | 2023-06-09 | - |
dc.date.issued | 2023-08 | - |
dc.identifier.citation | MICROELECTRONICS JOURNAL, v.138 | - |
dc.identifier.issn | 0026-2692 | - |
dc.identifier.uri | http://hdl.handle.net/10203/307192 | - |
dc.description.abstract | A systematic RF characterization and small-signal parameter extraction for 28 nm fully depleted silicon on insulator (FDSOI) MOSFETs is presented in this paper. Two-step and hybrid de-embedding methodologies have been applied and compared for the accurate de-embedding of the on-chip RF test pads and access interconnect line elements. To avoid the accumulated error from the de-embedding for the small signal model of the FDSOI MOSFET, an error check criterion is adopted and utilized. Then, the complete extrinsic and intrinsic small-signal parameters of the device were extracted at multi-bias points based on the combination of direct extraction and linear regression approaches. For the extrinsic parameter extraction, the substrate-related parasitic elements and the extrinsic resistance components have been extracted. For the intrinsic small-signal parameter extraction, a complete model is presented and applied for direct extraction of the small-signal parameters. To verify the validity of the proposed modeling approach and the employed small-signal model, the S-parameters of a 28 nm FDSOI NMOS device with a 16 × 1 μm gate width were measured and characterized. From the comparison of the measured and modeled data, it is found that the proposed de-embedding and small-signal model provide an accurate characterization of RF parameter extraction for the FDSOI MOSFETs up to 110 GHz. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Systematic characterization for RF small-signal parameter extraction of 28 nm FDSOI MOSFETs up to 110 GHz | - |
dc.type | Article | - |
dc.identifier.wosid | 001019693000001 | - |
dc.identifier.scopusid | 2-s2.0-85161332013 | - |
dc.type.rims | ART | - |
dc.citation.volume | 138 | - |
dc.citation.publicationname | MICROELECTRONICS JOURNAL | - |
dc.identifier.doi | 10.1016/j.mejo.2023.105862 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | RF | - |
dc.subject.keywordAuthor | Small-signal modeling | - |
dc.subject.keywordAuthor | Parameter extraction | - |
dc.subject.keywordAuthor | 28nm FDSOI | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.