DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김상현 | ko |
dc.contributor.author | 박주혁 | ko |
dc.contributor.author | 금대명 | ko |
dc.date.accessioned | 2023-06-08T07:01:03Z | - |
dc.date.available | 2023-06-08T07:01:03Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/307151 | - |
dc.description.abstract | Various embodiments may provide a highly efficient micro light-emitting diode (LED) in a low current range, a method of fabricating the same, and a display including the same. The micro LED includes a first conductive type semiconductor layer and a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a single quantum well structure. The single quantum well structure may be formed so that a ratio of a conduction band offset of any one of the first conductive type semiconductor layer or the second conductive type semiconductor layer and a valence band offset of the other of the first conductive type semiconductor layer or the second conductive type semiconductor layer becomes greater than 0 and less than 1. | - |
dc.title | HIGHLY EFFICIENT MICRO LED AT LOW CURRENT RANGE AND FABRICATION METHOD THEREOF, AND DISPLAY COMPRISING THE SAME | - |
dc.title.alternative | 저전류 영역에서의 효율 증대 마이크로 발광 다이오드 소자와 그의 제조 방법 및 그를 포함하는 디스플레이 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | 김상현 | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 110106257 | - |
dc.identifier.patentRegistrationNumber | I786547 | - |
dc.date.application | 2021-02-23 | - |
dc.date.registration | 2022-12-11 | - |
dc.publisher.country | CH | - |
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