Threshold Switching - Phase Change Memory (TS-PCM) for Simultaneous Emulation of Synaptic and Intrinsic Plasticity
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 성상현 | ko |
| dc.contributor.author | 정유진 | ko |
| dc.contributor.author | 이건재 | ko |
| dc.date.accessioned | 2023-06-02T00:00:13Z | - |
| dc.date.available | 2023-06-02T00:00:13Z | - |
| dc.date.created | 2023-05-31 | - |
| dc.date.issued | 2023-02-15 | - |
| dc.identifier.citation | 제 30회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/307001 | - |
| dc.language | English | - |
| dc.publisher | 하이닉스, 한국반도체산업협회, 한국반도체연구조합 | - |
| dc.title | Threshold Switching - Phase Change Memory (TS-PCM) for Simultaneous Emulation of Synaptic and Intrinsic Plasticity | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제 30회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 하이원 리조트 | - |
| dc.contributor.localauthor | 이건재 | - |
| dc.contributor.nonIdAuthor | 성상현 | - |
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