Monolithic 3D III-V HEMT for future communication and quantum computing
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sanghyeon | ko |
| dc.date.accessioned | 2023-05-10T12:01:14Z | - |
| dc.date.available | 2023-05-10T12:01:14Z | - |
| dc.date.created | 2023-05-03 | - |
| dc.date.issued | 2022-09 | - |
| dc.identifier.citation | International Conference on IC Design and Technology (ICICDT), pp.XXVI | - |
| dc.identifier.issn | 2381-3555 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/306695 | - |
| dc.description.abstract | Recently, monolithic 3-dimensional (M3D) integration has stirred much attention in various applications such as CMOS, RF, image sensors, etc. In terms of the materials, III-V could be promising candidates due to their superior material characteristics and low process temperature, which are important constrain in M3D integration. In this talk, we discuss one of the potential applications of III-V-based M3D including communication and quantum computing. | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | Monolithic 3D III-V HEMT for future communication and quantum computing | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000945920500050 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | XXVI | - |
| dc.citation.endingpage | XXVI | - |
| dc.citation.publicationname | International Conference on IC Design and Technology (ICICDT) | - |
| dc.identifier.conferencecountry | VN | - |
| dc.identifier.conferencelocation | Hanoi | - |
| dc.identifier.doi | 10.1109/ICICDT56182.2022.9933095 | - |
| dc.contributor.localauthor | Kim, Sanghyeon | - |
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