DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Jung-Dae | ko |
dc.contributor.author | Park, Jin-Seong | ko |
dc.contributor.author | Lee, Han-Choon | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2008-02-18T06:44:46Z | - |
dc.date.available | 2008-02-18T06:44:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-06 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.9, pp.G282 - G284 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/3062 | - |
dc.description.abstract | The two-step atomic layer deposition of tantalum nitride (TaN) in which the deposition cycle involved two chemical reaction steps, the formation of elemental tantalum (Ta) by reducing tantalum-pentafluoride (TaF5) with hydrogen plasma and the subsequent nitridation of the preformed Ta with NH3, was performed at 350 degrees C. Cubic-TaN with a Ta/N ratio of 1:1 was achieved independently of the nitridation time, and the fluorine content of the films was below the detection limit using Auger electron spectroscopy. As a result, the electrical resistivity of the TaN film was reduced below 500 mu Omega cm by suppressing the formation of Ta3N5. (c) 2006 The Electrochemical Society. | - |
dc.description.sponsorship | Brain Korea 21 and System IC 2010 supported this work. Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Electrochemical Soc Inc | - |
dc.subject | DIFFUSION BARRIER | - |
dc.subject | CU METALLIZATION | - |
dc.subject | REDUCING AGENT | - |
dc.subject | TAN | - |
dc.subject | GROWTH | - |
dc.subject | COPPER | - |
dc.title | A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films | - |
dc.type | Article | - |
dc.identifier.wosid | 000239283500021 | - |
dc.identifier.scopusid | 2-s2.0-33746546306 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | G282 | - |
dc.citation.endingpage | G284 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.2216593 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Kwon, Jung-Dae | - |
dc.contributor.nonIdAuthor | Park, Jin-Seong | - |
dc.contributor.nonIdAuthor | Lee, Han-Choon | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DIFFUSION BARRIER | - |
dc.subject.keywordPlus | CU METALLIZATION | - |
dc.subject.keywordPlus | REDUCING AGENT | - |
dc.subject.keywordPlus | TAN | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | COPPER | - |
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