DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kuk, Songhyeon | ko |
dc.contributor.author | Han, Seungmin | ko |
dc.contributor.author | Lee, Dong Hyun | ko |
dc.contributor.author | Kim, Bong Ho | ko |
dc.contributor.author | Shim, Joonsup | ko |
dc.contributor.author | Park, Min Hyuk | ko |
dc.contributor.author | Han, Jae-Hoon | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.date.accessioned | 2023-02-03T01:01:37Z | - |
dc.date.available | 2023-02-03T01:01:37Z | - |
dc.date.created | 2022-11-23 | - |
dc.date.created | 2022-11-23 | - |
dc.date.created | 2022-11-23 | - |
dc.date.created | 2022-11-23 | - |
dc.date.created | 2022-11-23 | - |
dc.date.issued | 2023-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.44, no.1, pp.36 - 39 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/304994 | - |
dc.description.abstract | We propose a higher-κ non-hysteric ferroelectric field-effect transistor (FEFET) using reversible domain wall displacement. By separately stimulating reversible and irreversible domain walls, whose concepts have been experimentally suggested recently, our HfZrOx-based FEFET showed remarkable performance as both a logic and a memory device. This was achieved by relatively low-temperature annealing, contributing to the formation of more reversible domain walls in the film. Finally, we demonstrated the feasibility of logic and memory co-integration by common fabrication process with complementary metal-oxide-semiconductor (CMOS) compatibility. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization | - |
dc.type | Article | - |
dc.identifier.wosid | 000924875500010 | - |
dc.identifier.scopusid | 2-s2.0-85141626376 | - |
dc.type.rims | ART | - |
dc.citation.volume | 44 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 36 | - |
dc.citation.endingpage | 39 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/led.2022.3219247 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Han, Seungmin | - |
dc.contributor.nonIdAuthor | Lee, Dong Hyun | - |
dc.contributor.nonIdAuthor | Park, Min Hyuk | - |
dc.contributor.nonIdAuthor | Han, Jae-Hoon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ferroelectrics | - |
dc.subject.keywordAuthor | ferroelectric transistor | - |
dc.subject.keywordAuthor | hafnium zirconium oxide | - |
dc.subject.keywordAuthor | ferroelectric memory | - |
dc.subject.keywordAuthor | reversible polarization | - |
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