Characteristics of two-dimensional MoS2 grown on GaN substrates by metal-organic chemical vapor deposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ahn, Seonghun | ko |
| dc.contributor.author | Cho, Yong-Hoon | ko |
| dc.contributor.author | Song, Yongho | ko |
| dc.date.accessioned | 2023-01-27T03:00:45Z | - |
| dc.date.available | 2023-01-27T03:00:45Z | - |
| dc.date.created | 2023-01-12 | - |
| dc.date.issued | 2022-07-19 | - |
| dc.identifier.citation | The 20th International Symposium on the Physics of Semiconductors and Applications, ISPSA 2022 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/304702 | - |
| dc.language | English | - |
| dc.publisher | The Korean Physical Society | - |
| dc.title | Characteristics of two-dimensional MoS2 grown on GaN substrates by metal-organic chemical vapor deposition | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 20th International Symposium on the Physics of Semiconductors and Applications, ISPSA 2022 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Ramada Plaza Jeju Hotel | - |
| dc.contributor.localauthor | Cho, Yong-Hoon | - |
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