CMOS IMAGE SENSOR씨모스 이미지 센서
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최양규 | ko |
| dc.contributor.author | 이상준 | ko |
| dc.contributor.author | 장동윤 | ko |
| dc.date.accessioned | 2022-12-22T12:00:37Z | - |
| dc.date.available | 2022-12-22T12:00:37Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/303581 | - |
| dc.description.abstract | Disclosed is a CMOS image sensor, comprising a photodiode formed in a substrate, a floating diffusion region formed in the substrate in a manner such that it is distanced from the photodiode surrounds the photodiode and a transfer gate formed in a manner such that it is distanced from the photodiode and the floating diffusion region and formed in a boundary area between the photodiode and the floating diffusion region, thereby overlapping the photodiode and the floating diffusion region. | - |
| dc.title | CMOS IMAGE SENSOR | - |
| dc.title.alternative | 씨모스 이미지 센서 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 최양규 | - |
| dc.contributor.nonIdAuthor | 이상준 | - |
| dc.contributor.nonIdAuthor | 장동윤 | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 200610090020.8 | - |
| dc.identifier.patentRegistrationNumber | 100536152 | - |
| dc.date.application | 2006-06-23 | - |
| dc.date.registration | 2009-09-02 | - |
| dc.publisher.country | CC | - |
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