Method of manufacturing photoreceiver감광체 제조 방법

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Disclosed is a method of manufacturing a photoreceiver, including sequentially laminating a buffer layer, a channel layer, a barrier layer, and a cap layer on a substrate; forming a mesa for HEMT and MSM PD by removing the buffer layer, the channel layer, the barrier layer, and the cap layer with the exception of a region corresponding to HEMT and MSM PD; forming a source electrode and a drain electrode of HEMT; removing the cap layer from a region corresponding to a gate electrode of HEMT and a Schottky electrode of MSM PD; forming the gate electrode of HEMT and the Schottky electrode of HEMT on the cap layer-removed region; and removing the cap layer, the barrier layer and the channel layer from a region corresponding to an optical waveguide, to expose the optical waveguide.
Assignee
KAIST
Country
US (United States)
Application Date
2005-09-15
Application Number
11228471
Registration Date
2007-09-11
Registration Number
07268027
URI
http://hdl.handle.net/10203/303117
Appears in Collection
RIMS Patents
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