DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jai-Young | ko |
dc.contributor.author | Lee, Han-Ho | ko |
dc.contributor.author | Lee, Ki-Young | ko |
dc.contributor.author | Jung, Jae-Han | ko |
dc.contributor.author | Kim, Dong-Myung | ko |
dc.contributor.author | Yu, Ji-Sang | ko |
dc.date.accessioned | 2022-12-14T09:01:21Z | - |
dc.date.available | 2022-12-14T09:01:21Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/303020 | - |
dc.description.abstract | The present invention provides a hydrogen-absorbing alloy system of ultra high capacity for electrode of secondary battery. In accordance with the present invention, the hydrogen-absorbing Ti alloy system is represented as a following general formula:Ti.sub.A Zr.sub.B V.sub.C Mn.sub.D Ni.sub.E M.sub.Fwherein, M represents at least one metal which is selected from the group consisting of Cr, Co, Fe, Cu, Al, Si, Hf, Nb, Mo and R.E., where R.E. represents at least one metal which is selected from the group of rare-earth elements consisting of La, Ce, Pr, Nd and Sm; and, A, B, C, D, E and F have atomic ratios ranging 0.2.ltoreq.A.ltoreq.0.35, 0.03.ltoreq.B.ltoreq.0.15, 0.15.ltoreq.C.ltoreq.0.4, 0.8.ltoreq.D.ltoreq.0.2, 0.13.ltoreq.E.ltoreq.0.35 and 0.ltoreq.F.ltoreq.0.1, respectively, with the proviso that A+B+C+D+E+F=1 and A+B.ltoreq.0.45. The hydrogen-absorbing Ti alloy system of the invention, has molar molecular weight of 50 to 65 g/mol, C14-hexagonal crystalline structure of single phase, lattice constant of a: 4.902-5.004 .ANG. and c: 7.972-8.168 .ANG., ultra high discharge capacity of 400 mAh/g or more, which can be employed as an anode material of a Ni--MH secondary battery. | - |
dc.title | Hydrogen-absorbing alloy of ultra high capacity for electrode of secondary battery | - |
dc.title.alternative | 이차 전지 전극용 초고용량 수소 흡수 합금 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.nonIdAuthor | Lee, Han-Ho | - |
dc.contributor.nonIdAuthor | Lee, Ki-Young | - |
dc.contributor.nonIdAuthor | Jung, Jae-Han | - |
dc.contributor.nonIdAuthor | Kim, Dong-Myung | - |
dc.contributor.nonIdAuthor | Yu, Ji-Sang | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 08761440 | - |
dc.identifier.patentRegistrationNumber | 05922146 | - |
dc.date.application | 1996-12-06 | - |
dc.date.registration | 1999-07-13 | - |
dc.publisher.country | US | - |
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