Method for manufacturing a SOI-type semiconductor structureSOI형 반도체 구조 제조 방법

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The present invention relates to a method for manufacturing a semiconductor wafer having a SOI wafer-like structure which is prepared on a silicon substrate by electrochemical etching, and an active-driven liquid crystal display employing the semiconductor wafer as a pixel switching wafer. In accordance with the method for manufacturing the SOI- type semiconductor wafer, a wafer having a good electrical insulation property, low leakage current and small parasitic capacity, like a SOI wafer, can be prepared, by employing a silicon substrate which is cheaper than the SOI substrate.
Assignee
KAIST
Country
US (United States)
Application Date
1997-05-27
Application Number
08864551
Registration Date
2000-03-07
Registration Number
06033925
URI
http://hdl.handle.net/10203/303016
Appears in Collection
RIMS Patents
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