Non-volatile memory device using AFM and method for operating the device

Abstract

A non-volatile memory device including a silicon oxide film formed to a desired thickness over a silicon substrate, and a plurality of nano crystals formed in the silicon oxide film by a conductive material implanted in the silicon oxide film. The invention also provides a data storing method using the non-volatile memory device. The data storing method includes the steps of disposing an atomic force microscope (AFM) tip, adapted to locally applying an electric field to a micro area, at a desired height over the semiconductor device, applying voltage of a threshold level or higher level to the AFM tip under the condition in which the height of the AFM tip is maintained, thereby effecting an electric field on a desired portion of the semiconductor device disposed beneath the AFM tip, and forcing the nano crystals formed in the silicon oxide film to capture free electrons existing in the silicon substrate by virtue of the electric field.