DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Chul-Hi | ko |
dc.contributor.author | Kim, Choong Ki | ko |
dc.contributor.author | Lee, Jung-Yeal | ko |
dc.contributor.author | Oh, Kil-Hwan | ko |
dc.date.accessioned | 2022-12-12T07:04:01Z | - |
dc.date.available | 2022-12-12T07:04:01Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/302821 | - |
dc.description.abstract | A method for fabricating the polycrystal silicon TFT under a low temperature which has an improved electron mobility, comprises the steps of forming an oxide film on a substrate, depositing a polycrystal silicon on the oxide film and patterning the polycrystal silicon so that source and drain regions and a channel region remain, growing a gate insulating layer on the patterned polycrystal silicon by ECR plasma thermal oxidation, depositing a material for a gate on the whole surface and removing the material and the gate insulating layer in portions except for a gate region to form the gate, and performing ion implantation on the exposed areas of the polycrystal silicon to form the source and drain regions. | - |
dc.title | Method for fabricating a polycrystal silicon thin film transistor | - |
dc.title.alternative | 다결정 실리콘 박막 트랜지스터 제조 방법 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Han, Chul-Hi | - |
dc.contributor.nonIdAuthor | Lee, Jung-Yeal | - |
dc.contributor.nonIdAuthor | Oh, Kil-Hwan | - |
dc.contributor.assignee | LG Electronics Inc. | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 08405501 | - |
dc.identifier.patentRegistrationNumber | 05700699 | - |
dc.date.application | 1995-03-16 | - |
dc.date.registration | 1997-12-23 | - |
dc.publisher.country | US | - |
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