245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yun, ByeongHun | ko |
| dc.contributor.author | Park, Dae-Woong | ko |
| dc.contributor.author | Choi, Kyung-Sik | ko |
| dc.contributor.author | Song, Ho-Jin | ko |
| dc.contributor.author | Lee, Sang-Gug | ko |
| dc.date.accessioned | 2022-11-29T02:01:01Z | - |
| dc.date.available | 2022-11-29T02:01:01Z | - |
| dc.date.created | 2022-11-28 | - |
| dc.date.issued | 2021-11 | - |
| dc.identifier.citation | 2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/301199 | - |
| dc.description.abstract | Lately, sub-THz bands are drawing attention for high data-rate communications where the H-band (220-325GHz) is a strong candidate for the next generation (6G) wireless communication systems. In terms of the level of integration and cost, CMOS has been the most attractive technology for commercialization. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | 245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000768220800002 | - |
| dc.identifier.scopusid | 2-s2.0-85124001323 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Busan | - |
| dc.identifier.doi | 10.1109/A-SSCC53895.2021.9634180 | - |
| dc.contributor.localauthor | Lee, Sang-Gug | - |
| dc.contributor.nonIdAuthor | Park, Dae-Woong | - |
| dc.contributor.nonIdAuthor | Choi, Kyung-Sik | - |
| dc.contributor.nonIdAuthor | Song, Ho-Jin | - |
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