DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Seo Hak | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2022-11-28T06:03:42Z | - |
dc.date.available | 2022-11-28T06:03:42Z | - |
dc.date.created | 2022-11-27 | - |
dc.date.issued | 2022-02-17 | - |
dc.identifier.citation | The 9th International Workshop on 2D Materials | - |
dc.identifier.uri | http://hdl.handle.net/10203/301130 | - |
dc.description.abstract | Transition metal chalcogen compounds have high transparency, flexibility, and excellent electrical properties. Among them, molybdenum disulfide(MoS2) is widely used as an n-type semiconductor material. In the case of MoS2, it has a relatively high on-off current ratio, high mobility, and excellent flexibility. However, It shows significantly lower mobility characteristics than its electrical potential because of its poor interfacial characteristic with an insulating layer and a substrate.[1] Particularly, because 2D materials have incongruity with a conventional ALD process due to their dangling bond free surface, 2D materials based transistors generally show inferior interface quality when they are applied in a form of top gate transistor.[2] In this study, by applying a newly invented initiated chemical deposition(iCVD) process based high-k dielectric(pHEMA-g-AlOX) as a top gate insulator of MoS2 transistor, high performance top gate monolayer MoS2 transistor with mobility of 13cm2V-1s-1, SS of 135mVdec-1 and low hysteresis(<100mV) value is developed.[3] Furthermore, it shows more than 5-times higher mobility than a conventional Al2O3 insulator-based top gate monolayer MoS2 transistor. Systematic analyses show the reason for this improvement is due to a less coulombic scattering effect and a less surface optical phonon scattering effect of a hybrid dielectric-based top gate MoS2 transistor than those of Al2O3 dielectric-based top gate device. | - |
dc.language | English | - |
dc.publisher | National Research Foundation of Korea | - |
dc.title | Dielectric Engineering for Enhanced Top gate Monolayer MoS2 Transistor Using iCVD-based High-k Dielectric | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | The 9th International Workshop on 2D Materials | - |
dc.identifier.conferencecountry | JA | - |
dc.identifier.conferencelocation | Virtual | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Park, Seo Hak | - |
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