RF Characterization and Small Signal Extraction of 28nm FDSOI MOSFETs Up to 110GHz

Abstract

Accurate RF characterization and small-signal parameter extraction for 28nm fully depleted silicon on insulator (FDSOI) MOSFETs is presented in this paper. At first, to deembed the on-chip external elements of the device test structure associated with the RF pads and access interconnect lines, a hybrid cascade de-embedding method was applied. Then, the complete extrinsic and intrinsic small-signal parameters of the device were extracted at multi bias points based on the direct parameter extraction approach. To verify the model validity, the Sparameters of FDSOI NMOS devices with a 28nm gate-length were measured and characterized by comparing the measured and modeled data. It is found that the proposed de-embedding and small-signal model provide a good agreement in the characterization of the FDSOI MOSFETs up to 110GHz. © 2022 The Institute of Electronics Information and Communication Engineers (IEICE) of Japan.