Efficient Atomistic Simulations of Lateral Heterostructure Devices with Metal Contacts
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Mincheol | ko |
| dc.contributor.author | Joo, Kanghyun | ko |
| dc.date.accessioned | 2022-11-24T11:01:55Z | - |
| dc.date.available | 2022-11-24T11:01:55Z | - |
| dc.date.created | 2022-11-24 | - |
| dc.date.issued | 2022-09-07 | - |
| dc.identifier.citation | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2022 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/300902 | - |
| dc.language | English | - |
| dc.publisher | SISPAD | - |
| dc.title | Efficient Atomistic Simulations of Lateral Heterostructure Devices with Metal Contacts | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2022 | - |
| dc.identifier.conferencecountry | SP | - |
| dc.identifier.conferencelocation | Granada | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
| dc.contributor.nonIdAuthor | Joo, Kanghyun | - |
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