High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors

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dc.contributor.authorShim, Joonsupko
dc.contributor.authorLim, Jinhako
dc.contributor.authorGeum, Dae-Myeongko
dc.contributor.authorYou, Jong-Bumko
dc.contributor.authorYoon, Hyeonhoko
dc.contributor.authorKim, Joon Pyoko
dc.contributor.authorBaek, Woo Jinko
dc.contributor.authorKim, Inkiko
dc.contributor.authorHan, Jae-Hoonko
dc.contributor.authorKim, Sanghyeonko
dc.date.accessioned2022-11-23T06:00:16Z-
dc.date.available2022-11-23T06:00:16Z-
dc.date.created2022-11-23-
dc.date.created2022-11-23-
dc.date.created2022-11-23-
dc.date.created2022-11-23-
dc.date.issued2022-11-
dc.identifier.citationOPTICS EXPRESS, v.30, no.23, pp.42663 - 42677-
dc.identifier.issn1094-4087-
dc.identifier.urihttp://hdl.handle.net/10203/300579-
dc.description.abstractConventional photon detectors necessarily face critical challenges regarding strong wavelength-selective response and narrow spectral bandwidth, which are undesirable for spectroscopic applications requiring a wide spectral range. With this perspective, herein, we overcome these challenges through a free-carrier absorption-based waveguide-integrated bolometer for infrared spectroscopic sensors on a silicon-on-insulator (SOI) platform featuring a spectrally flat response at near-infrared (NIR) range (1520-1620 nm). An in-depth thermal analysis was conducted with a systematic investigation of geometry dependence on the detectors. We achieved great performances: temperature coefficient of resistance (TCR) of -3.786%/K and sensitivity of -26.75%/mW with a low wavelength dependency, which are record-high values among reported waveguide bolometers so far, to our knowledge. In addition, a clear on-off response with the rise/fall time of 24.2/29.2 µs and a 3-dB roll-off frequency of ∼22 kHz were obtained, sufficient for a wide range of sensing applications. Together with the possibility of expanding an operation range to the mid-infrared (MIR) band, as well as simplicity in the detector architecture, our work here presents a novel strategy for integrated photodetectors covering NIR to MIR at room temperature for the development of the future silicon photonic sensors with ultrawide spectral bandwidth. © 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.-
dc.languageEnglish-
dc.publisherOPTICAL SOC AMER-
dc.titleHigh-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors-
dc.typeArticle-
dc.identifier.wosid000901327200128-
dc.identifier.scopusid2-s2.0-85141525040-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.issue23-
dc.citation.beginningpage42663-
dc.citation.endingpage42677-
dc.citation.publicationnameOPTICS EXPRESS-
dc.identifier.doi10.1364/OE.469862-
dc.contributor.localauthorKim, Sanghyeon-
dc.contributor.nonIdAuthorGeum, Dae-Myeong-
dc.contributor.nonIdAuthorYou, Jong-Bum-
dc.contributor.nonIdAuthorHan, Jae-Hoon-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGRATING COUPLERS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusOPTIMIZATION-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusELECTROREFRACTION-
dc.subject.keywordPlusELECTROABSORPTION-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusPREDICTIONS-
dc.subject.keywordPlusDETECTORS-
dc.subject.keywordPlusNOISE-
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