Channel Mobility Boosting through Ge profile and grain size engineering in a Ge-diffused Poly-Si channel for 3D V-NAND Flash Memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이태인 | ko |
| dc.contributor.author | 이윤희 | ko |
| dc.contributor.author | 신의중 | ko |
| dc.contributor.author | 김민주 | ko |
| dc.contributor.author | 이정훈 | ko |
| dc.contributor.author | 이재덕 | ko |
| dc.contributor.author | 조병진 | ko |
| dc.date.accessioned | 2022-11-22T01:01:56Z | - |
| dc.date.available | 2022-11-22T01:01:56Z | - |
| dc.date.created | 2022-11-18 | - |
| dc.date.issued | 2022-01-26 | - |
| dc.identifier.citation | 제29회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/300386 | - |
| dc.language | English | - |
| dc.publisher | 연세대학교, 한국반도체산업협회, 한국반도체연구조합 | - |
| dc.title | Channel Mobility Boosting through Ge profile and grain size engineering in a Ge-diffused Poly-Si channel for 3D V-NAND Flash Memory | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제29회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 하이원 그랜드호텔 | - |
| dc.contributor.localauthor | 조병진 | - |
| dc.contributor.nonIdAuthor | 이태인 | - |
| dc.contributor.nonIdAuthor | 이윤희 | - |
| dc.contributor.nonIdAuthor | 신의중 | - |
| dc.contributor.nonIdAuthor | 김민주 | - |
| dc.contributor.nonIdAuthor | 이정훈 | - |
| dc.contributor.nonIdAuthor | 이재덕 | - |
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