A 600mVPP-Input-Range 94.5dB-SNDR NS-SAR-Nested DSM with 4th-Order Truncation-Error Shaping and Input-Impedance Boosting for Biosignal Acquisition

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We present a 600mVPP-linear-input-range 94.5dB-SNDR NS-SAR-based DSM with input-impedance (ZIN) boosting for biopotential recording. The proposed direct-conversion ADC utilizes a 1st-order DSM to widen the input range and a 2nd-order noise-shaping SAR (NS-SAR) ADC for high resolution and power efficiency. Also, by feeding the truncation (TRNC) error back to the NS-SAR ADC, the error is shaped in the 4th order, further lowering the noise. Fabricated in 65nm CMOS, the NS-SAR-nested DSM achieves 208MO ZIN at DC, 174.3dB FOMSNDR, and 175.6dB FOMDR, consuming 5.2W.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Issue Date
2022-06
Language
English
Citation

2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, pp.52 - 53

ISSN
0743-1562
DOI
10.1109/VLSITechnologyandCir46769.2022.9830401
URI
http://hdl.handle.net/10203/299629
Appears in Collection
EE-Conference Papers(학술회의논문)
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