A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Geum, Dae-Myeong | ko |
| dc.contributor.author | Lim, Jinha | ko |
| dc.contributor.author | Jang, Junho | ko |
| dc.contributor.author | Ahn, Seungyeop | ko |
| dc.contributor.author | Kim, SeongKwang | ko |
| dc.contributor.author | Shim, Joonsup | ko |
| dc.contributor.author | Kim, Bong Ho | ko |
| dc.contributor.author | Park, Juhyuk | ko |
| dc.contributor.author | Baek, Woo Jin | ko |
| dc.contributor.author | Jeong, Jaeyong | ko |
| dc.contributor.author | Kim, Sanghyeon | ko |
| dc.date.accessioned | 2022-11-15T05:02:11Z | - |
| dc.date.available | 2022-11-15T05:02:11Z | - |
| dc.date.created | 2022-09-27 | - |
| dc.date.issued | 2022-06 | - |
| dc.identifier.citation | 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, pp.413 - 414 | - |
| dc.identifier.issn | 0743-1562 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/299628 | - |
| dc.description.abstract | A sub-micron-thick InGaAs photodetectors (PDs) with a broad spectrum coverage (400-1700 nm) and high external quantum efficiency (EQE) (>70%) were successfully demonstrated through guided-mode resonance structure and surface layer thinning process. It showed the outstanding EQE of 83.8%, and 65.5% at 1000 nm, 1550 nm for 500-nm-thick InGaAs absorption layer, respectively. Compared to previous results, thickness reduction by 6.8 times and comparable QE were simultaneously achieved. | - |
| dc.language | English | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%) | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-85135208889 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 413 | - |
| dc.citation.endingpage | 414 | - |
| dc.citation.publicationname | 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Honolulu | - |
| dc.identifier.doi | 10.1109/VLSITechnologyandCir46769.2022.9830388 | - |
| dc.contributor.localauthor | Kim, Sanghyeon | - |
| dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
| dc.contributor.nonIdAuthor | Lim, Jinha | - |
| dc.contributor.nonIdAuthor | Jang, Junho | - |
| dc.contributor.nonIdAuthor | Ahn, Seungyeop | - |
| dc.contributor.nonIdAuthor | Kim, SeongKwang | - |
| dc.contributor.nonIdAuthor | Shim, Joonsup | - |
| dc.contributor.nonIdAuthor | Kim, Bong Ho | - |
| dc.contributor.nonIdAuthor | Park, Juhyuk | - |
| dc.contributor.nonIdAuthor | Baek, Woo Jin | - |
| dc.contributor.nonIdAuthor | Jeong, Jaeyong | - |
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