Enhanced external quantum efficiency in the low-current region using three terminal gan-based blue micro-light-emitting diodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Baek, Woo Jin | ko |
| dc.contributor.author | Geum, Dae-Myeong | ko |
| dc.contributor.author | Park, Juhyuk | ko |
| dc.contributor.author | Kim, Sang-hyun | ko |
| dc.date.accessioned | 2022-11-11T06:00:26Z | - |
| dc.date.available | 2022-11-11T06:00:26Z | - |
| dc.date.created | 2022-09-27 | - |
| dc.date.created | 2022-09-27 | - |
| dc.date.issued | 2022-05 | - |
| dc.identifier.citation | International Symposium, Seminar and Exhibition, Display Week 2022, pp.545 - 548 | - |
| dc.identifier.issn | 0097-966X | - |
| dc.identifier.uri | http://hdl.handle.net/10203/299527 | - |
| dc.description.abstract | We demonstrate three-terminal micro-light-emitting diodes which have an additional electrode on the sidewall gate oxide to decrease sidewall leakage current of μLEDs. Throughout the study, we found the external quantum efficiency in the low current density region can be increased by applying negative bias in the sidewall gate oxide. | - |
| dc.language | English | - |
| dc.publisher | John Wiley and Sons Inc | - |
| dc.title | Enhanced external quantum efficiency in the low-current region using three terminal gan-based blue micro-light-emitting diodes | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-85135616395 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 545 | - |
| dc.citation.endingpage | 548 | - |
| dc.citation.publicationname | International Symposium, Seminar and Exhibition, Display Week 2022 | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | San Jose | - |
| dc.identifier.doi | 10.1002/sdtp.15545 | - |
| dc.contributor.localauthor | Kim, Sang-hyun | - |
| dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
| dc.contributor.nonIdAuthor | Park, Juhyuk | - |
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