Enhanced external quantum efficiency in the low-current region using three terminal gan-based blue micro-light-emitting diodes

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We demonstrate three-terminal micro-light-emitting diodes which have an additional electrode on the sidewall gate oxide to decrease sidewall leakage current of μLEDs. Throughout the study, we found the external quantum efficiency in the low current density region can be increased by applying negative bias in the sidewall gate oxide.
Publisher
John Wiley and Sons Inc
Issue Date
2022-05
Language
English
Citation

International Symposium, Seminar and Exhibition, Display Week 2022, pp.545 - 548

ISSN
0097-966X
DOI
10.1002/sdtp.15545
URI
http://hdl.handle.net/10203/299527
Appears in Collection
MA-Conference Papers(학술회의논문)
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