Visualization of domain structure and switching properties of Hf0.5Zr0.5O2 at various annealing temperatures for integrated ferroelectrics

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dc.contributor.authorYun, Seok Jungko
dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorKim, Hoonko
dc.contributor.authorSeo, Myungsooko
dc.contributor.authorKang, Min Hoko
dc.contributor.authorHong, Seung Bumko
dc.date.accessioned2022-11-11T03:01:26Z-
dc.date.available2022-11-11T03:01:26Z-
dc.date.created2022-10-04-
dc.date.issued2020-11-01-
dc.identifier.citationThe 6th International Conference on Electronic Materials and Nanotechnology for Green Environment, ENGE 2020-
dc.identifier.urihttp://hdl.handle.net/10203/299523-
dc.languageEnglish-
dc.publisherThe Korean Institute of Metals and Materials-
dc.titleVisualization of domain structure and switching properties of Hf0.5Zr0.5O2 at various annealing temperatures for integrated ferroelectrics-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 6th International Conference on Electronic Materials and Nanotechnology for Green Environment, ENGE 2020-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationRamada Plaza Hotel Jeju & Online-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorYun, Seok Jung-
dc.contributor.nonIdAuthorKim, Hoon-
dc.contributor.nonIdAuthorKang, Min Ho-
dc.contributor.nonIdAuthorHong, Seung Bum-
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EE-Conference Papers(학술회의논문)
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