REFERENCE VOLTAGE GENERATING CIRCUIT기준 전압 생성 회로

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dc.contributor.authorCho, Gyu-Hyeongko
dc.contributor.authorChoi, Sungwonko
dc.contributor.authorYuk, Youngsubko
dc.date.accessioned2022-11-07T05:01:08Z-
dc.date.available2022-11-07T05:01:08Z-
dc.identifier.urihttp://hdl.handle.net/10203/299343-
dc.description.abstractA reference voltage generating circuit includes a bandgap reference (BGR) circuit configured to output an active reference voltage at a first node according to a sample signal; a first charging circuit configured to charge a first capacitor using the active reference voltage according to the sample signal; a second charging circuit configured to charge a second capacitor using the active reference voltage according to the sample signal; and a comparing circuit configured to compare a voltage difference between a charge voltage of the first capacitor and a charge voltage of the second capacitor with a threshold value, wherein the sample signal is a pulse signal generated using an output of the comparing circuit and the charge voltage of the first capacitor is provided as a low power reference voltage in a low power operation mode.-
dc.titleREFERENCE VOLTAGE GENERATING CIRCUIT-
dc.title.alternative기준 전압 생성 회로-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthorCho, Gyu-Hyeong-
dc.contributor.nonIdAuthorChoi, Sungwon-
dc.contributor.nonIdAuthorYuk, Youngsub-
dc.contributor.assigneeKAIST, SK Hynix Inc.-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber16543314-
dc.identifier.patentRegistrationNumber11422582-
dc.date.application2019-08-16-
dc.date.registration2022-08-23-
dc.publisher.countryUS-
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EE-Patent(특허)
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